Parametric study of the transient period characteristics of distributed feedback laser diodes

被引:0
作者
Hisham, Hisham Kadhum [1 ]
Anas, Siti Barirah Ahmad [2 ]
Abu Bakar, Muhammad Hafiz [2 ]
Alresheedi, Mohammed Thamer [3 ]
Abas, Ahmad Fauzi
Mahdi, Mohd Adzir [2 ]
机构
[1] Univ Basrah, Fac Engn, Elect Engn Dept, Basrah, Iraq
[2] Univ Putra Malaysia, Fac Engn, Wireless & Photon Networks Res Ctr, Upm Serdang, Selangor, Malaysia
[3] King Saud Univ, Coll Engn, Dept Elect Engn, Riyadh, Saudi Arabia
关键词
CONTINUOUS-WAVE OPERATION; DFB LASERS; INTENSITY;
D O I
10.1364/JOT.90.000068
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Subject of study. The operating response characteristics for a distributed feedback laser model has presented. Aim of study. A numerical optimization of model parameters is used to reduce the laser transient period by analyzing the effects of the laser injection current, the temperature variation, the dc-bias level, and the gain compression factor on transient period characteristics. Method. The transient period value decreases when the current ratio (i.e., injection current/threshold current) is increased. Main results. Significant reduction is observed in the relaxation oscillation period and the laser turn-on time delay as the effect of increasing the injection current and/or the biasing current. Practical significance. However, varying temperatures resulted in distributed feedback operating in the off-mode region due to increasing the transient period value. Meanwhile, the relaxation oscillation period value is reduced significantly with a faster stabilization period due to the damped sinusoidal oscillations as a result of increasing the & epsilon; value. & COPY; 2023 Optica Publishing Group
引用
收藏
页码:68 / 74
页数:7
相关论文
共 28 条
[1]  
Agrawal G. P., 1993, Semiconductor Lasers, V2nd
[2]   An infinite order perturbation approach to gain calculation in injection semiconductor lasers [J].
Ahmed, M ;
Yamada, M .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3004-3015
[3]   Large-signal analysis of analog intensity modulation of semiconductor lasers [J].
Ahmed, Moustafa ;
El-Lafi, Ali .
OPTICS AND LASER TECHNOLOGY, 2008, 40 (06) :809-819
[4]   Analysis of semiconductor laser dynamics under gigabit rate modulation [J].
Ahmed, Moustafa ;
Yamada, Minoru ;
Mahmoud, Safwat W. Z. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[5]   Experimental characterization of DFB and FP chaotic lasers with strong incoherent optical feedback [J].
Cardoza-Avendano, L. ;
Spirin, V. ;
Lopez-Gutierrez, R. M. ;
Lopez-Mercado, C. A. ;
Cruz-Hernandez, C. .
OPTICS AND LASER TECHNOLOGY, 2011, 43 (05) :949-955
[6]  
Carroll J., 1998, IET
[7]   Analysis, fabrication, and characterization of tunable DFB lasers with chirped gratings [J].
Chen, N ;
Nakano, Y ;
Okamoto, K ;
Tada, K ;
Morthier, GI ;
Baets, RG .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :541-546
[8]   Narrow Linewidth 1550 nm Corrugated Ridge Waveguide DFB Lasers [J].
Dridi, Kais ;
Benhsaien, Abdessamad ;
Zhang, Jessica ;
Hall, Trevor J. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (12) :1192-1195
[9]   Numerical simulation of intensity and phase noise from extracted parameters for CW DFB lasers [J].
Fatadin, Irshaad ;
Ives, David ;
Wicks, Martin .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (9-10) :934-941
[10]   25.6-Tb/s WDM transmission of polarization-multiplexed RZ-DQPSK signals [J].
Gnauck, A. H. ;
Charlet, G. ;
Tran, P. ;
Winzer, P. J. ;
Doerr, C. R. ;
Centanni, J. C. ;
Burrows, E. C. ;
Kawanishi, T. ;
Sakamoto, T. ;
Higuma, K. .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (1-4) :79-84