Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors

被引:20
作者
Abliz, Ablat [1 ,2 ]
Nurmamat, Patigul [1 ,2 ]
Wan, Da [3 ]
机构
[1] Xinjiang Univ, Xinjiang Key Lab Solid State Phys & Devices, Urumqi 830046, Peoples R China
[2] Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China
[3] Wuhan Univ Sci & Technol, Sch Informat Sci & Technol, Wuhan 430081, Peoples R China
基金
中国国家自然科学基金;
关键词
Indium gallium zinc oxide; Thin-film transistors; Heterostructure; Field-effect mobility; Stability; ELECTRICAL CHARACTERISTICS; BILAYER CHANNEL; PASSIVATION; NOISE; STABILITY; RELIABILITY; MOBILITY; BIAS;
D O I
10.1016/j.apsusc.2022.155257
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were fabricated, wherein the channel comprised a N2O plasma (a-IGZO:N2O) treated a-IGZO front layer and TiO2 ultra-thin back layer. A high field-effect mobility (mu FE) of 40.5 cm2/Vs and small sub-threshold swing (SS) of 250 mV/decade upon a SiO2/Si substrate were achieved using a rational design. Moreover, small threshold voltage shifts (Delta Vth) of 0.5 (-0.7) and 0.8 (-0.9) V under gate bias and light illumination stress tests were obtained. Using Si3N4/HfO2 gate dielectrics, mu FE and SS were enhanced to 53.6 cm2/Vs and 75 mV/decade, respectively. Experimental observations indicate that the electrons transfer from TiO2 to a-IGZO:N2O layer resulted in the accumulation of free carriers near aIGZO:N2O/TiO2 interfaces. Additionally, an appropriate N2O treatment reduced the oxygen-related defects and bulk/interface trap density, while controlling the carrier density in the bilayer a-IGZO:N2O/TiO2 TFTs. Furthermore, the ultra-thin TiO2 layer acted as a surface passivation layer that reduced the leakage current and protected the channel from ambient influences. The proposed high-performance hetero-structured a-IGZO:N2O/ TiO2 TFTs with superior stability are expected to provide a new and effective approach to obtaining highperformance metal oxide TFTs for application in thin film electronics.
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页数:9
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