All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors

In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT). All the electrical properties of In2O3 based on HfO2 were systematically analyzed. The In2O3/HfO2 device exhibits the best electrical performance at an optimized annealing temperature of 500 degrees C, including a high mu(FE) of 9 cm(2) V-1 s(-1), a high I-ON/I-OFF of 10(5), a low threshold voltage of 1.1 V, and a low sub-threshold of 0.31 V dec(-1). Finally, test the stability of the bias under positive bias stress (PBS) and negative bias stress (NBS) with threshold shifts (V-TH) of 0.35 and 0.13 V while these optimized properties are achieved at a small operating voltage of 2 V. All experimental results demonstrate the potential application of aqueous solution technology for future low-cost, energy-efficient, large-scale, and high-performance electronics.