Transparent, photosensitive and highly efficient pseudocapacitive binder-free Mo-modified NiO thin film electrode for bifunctional optoelectronic and energy storage applications

被引:18
作者
Adewinbi, Saheed [1 ]
Maphiri, Vusani [2 ]
Marnadu, R. [3 ]
Shkir, Mohd. [4 ,5 ]
Alsdran, Njod Mansour Hasan [4 ]
Algarni, H. [4 ]
Sujithkumar, G. [6 ]
Taleatu, Bidini [7 ]
Niyitanga, Theophile [8 ]
Kim, Haekyoung [8 ]
机构
[1] Osun State Univ, Dept Phys, Osogbo 210001, Nigeria
[2] Univ Pretoria, Crn Lynnwood & Univ Rd, Inst Appl Mat, Dept Phys, ZA-0002 Pretoria, South Africa
[3] GTN Arts Coll, PG Dept Phys, Dindigul 624005, Tamil Nadu, India
[4] King Khalid Univ, Fac Sci, Dept Phys, Abha 61413, Saudi Arabia
[5] Chandigarh Univ, Univ Ctr Res & Dev, Dept Chem, Mohali 140413, Punjab, India
[6] Sri Ramakrishna Missions Vidyalaya Coll Arts & Sci, Coimbatore, Tamil Nadu, India
[7] Obafemi Awolowo Univ, Dept Phys & Engn Phys, Ife 220005, Nigeria
[8] Yeungnam Univ, Sch Mat Sci & Engn, 280 Daehak Ro, Gyongsan 38541, South Korea
基金
新加坡国家研究基金会;
关键词
Mo-doped NiO; Electronic transition; Charge transport; Bandgap; Supercapacitive; Specific capacitance; DOPED NIO;
D O I
10.1016/j.jallcom.2022.168304
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a novel highly sensitive and pseudocapacitive transparent nickel oxide (NiO) thin film based electrode material fabricated on a conductive glass substrate using a facile binderless electrodeposition process. Effect of the incorporation of Mo-dopant ion on some surface structural and electrochemical properties of the electrode was examined for high performance optoelectronic and charge storage poten-tials. The material showed some uniqueness in some microstructural features and enhanced degree of crystallinity, suitable for charge extraction and transport with Mo doping. The deposited NiO film de-monstrated red shift in band structure by exhibiting optical band gap narrowing from 3.88 to 3.61 eV with increasing Mo content. The degree of disorder as revealed from Urbach response of NiO film was found varying with Mo-content. The material also exhibited enhanced Ni2+ electronic transition states with in-creasing Mo content which quenched at a critical dopant concentration of 2.4 %. The fabricated NiO thin film electrode showed increased supercapacitive specific capacitance and areal capacity up to a peak value of 1412 Fg-1 and 101 mAh m-2 for 3 % Mo dopant content at 5 mVs-1 scan rate and 0.5 mA cm-2, respectively, but returned diminished at higher dopant content. Excellent cycling stability at 85 % after 5000 cycles, was also exhibited. Impedance spectroscopic features of Mo-doped NiO electrode indicated fast electrolytic ion transfer response with high rate charge storage capability. The study presents successful fabrication of Mo-modified NiO nanostructured electrode film and demonstrated the influence of Mo impurity on tai-loring the properties of NiO host film as suitable electrode in high performance photocatalytic and su-percapacitor devices.(c) 2022 Elsevier B.V. All rights reserved.
引用
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页数:12
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