Tunable electronic and optical properties of ferroelectric WS2/Ga2O3 heterostructures

被引:12
作者
Wei, Dong [1 ]
Li, Yi [2 ]
Guo, Gaofu [1 ]
Yu, Heng [1 ]
Ma, Yaqiang [1 ]
Tang, Yanan [2 ]
Feng, Zhen [3 ]
Dai, Xianqi [1 ]
机构
[1] Henan Normal Univ, Sch Phys, Xinxiang 453007, Henan, Peoples R China
[2] Zhengzhou Normal Univ, Sch Phys & Elect Engn, Zhengzhou 450044, Henan, Peoples R China
[3] Henan Inst Technol, Sch Mat Sci & Engn, Xinxiang 453003, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric; optical properties; electronic structure; polarization reversal; TRANSITION; NANOSHEETS;
D O I
10.1088/1361-648X/acef89
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga2O3 layers provide a new approach to explore the electronic structure and optical properties of modulated WS2/Ga2O3 vdWHs. The WS2/Ga2O3? and WS2/Ga2O3? vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS2/Ga2O3 vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.
引用
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页数:11
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