Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

被引:6
|
作者
Li, Guo [1 ]
Xu, Mingsheng [1 ]
Zou, Dongyang [1 ]
Cui, Yingxin [1 ]
Zhong, Yu [1 ]
Cui, Peng [1 ]
Cheong, Kuan Yew [2 ]
Xia, Jinbao [1 ]
Nie, Hongkun [1 ]
Li, Shuqiang [1 ]
Linewih, Handoko [1 ]
Zhang, Baitao [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia
基金
中国国家自然科学基金;
关键词
silicon carbide power device; laser annealed; ohmic contact; NICKEL;
D O I
10.3390/cryst13071106
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
引用
收藏
页数:11
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