Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

被引:6
|
作者
Li, Guo [1 ]
Xu, Mingsheng [1 ]
Zou, Dongyang [1 ]
Cui, Yingxin [1 ]
Zhong, Yu [1 ]
Cui, Peng [1 ]
Cheong, Kuan Yew [2 ]
Xia, Jinbao [1 ]
Nie, Hongkun [1 ]
Li, Shuqiang [1 ]
Linewih, Handoko [1 ]
Zhang, Baitao [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia
基金
中国国家自然科学基金;
关键词
silicon carbide power device; laser annealed; ohmic contact; NICKEL;
D O I
10.3390/cryst13071106
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
引用
收藏
页数:11
相关论文
共 50 条
  • [31] Characterisation of Ni and Ni/Ti contact on n-type 4H-SiC
    Siad, M.
    Vargas, C. Pineda
    Nkosi, M.
    Saidi, D.
    Souami, N.
    Daas, N.
    Chami, A. C.
    APPLIED SURFACE SCIENCE, 2009, 256 (01) : 256 - 260
  • [32] Ti and Ti/Sb ohmic contacts on n-type 6H-SiC
    Barda, Bohumil
    Machac, Petr
    Hubickova, Marie
    MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 2022 - 2024
  • [33] Formation of low resistivity ohmic contacts to n-type 3C-SiC
    Wan, JW
    Capano, MA
    Melloch, MR
    SOLID-STATE ELECTRONICS, 2002, 46 (08) : 1227 - 1230
  • [34] Electroless Nickel for n-type Contact on 4H-SiC
    Mendis, Suwan P.
    Tin, Chin-Che
    Tin, Michelle T.
    Isaacs-Smith, Tamara
    Crandall, Erika R.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 837 - +
  • [35] CONTACT RESISTIVITY AND ADHESION OF NI/AUGE/AG/AU OHMIC CONTACT DIRECTLY OF N-TYPE ALGAAS
    EHARA, T
    SHIBATA, N
    OHTA, H
    NUKUI, T
    KAZUNO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A): : 3051 - 3053
  • [36] Optimization of ohmic contact on n-type GaAs by screen-printing silver paste
    Sun, Qiangjian
    Long, Junhua
    Dai, Pan
    Huang, Xinping
    Nie, Shuhong
    Su, Wenming
    Wu, Dongying
    Li, Xuefei
    Lu, Jianya
    Xing, Zhiwei
    Yang, Wenxian
    Lu, Shulong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (08)
  • [37] Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide
    Ou, Fang
    Buchholz, D. Bruce
    Yi, Fei
    Liu, Boyang
    Hseih, Chunhan
    Chang, Robert P. H.
    Ho, Seng-Tiong
    ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (04) : 1341 - 1345
  • [38] Effect of Argon Ion Irradiation on Ohmic Contact Formation on n-type Gallium Nitride
    Kimura, Kota
    Maeda, Masakatsu
    Takahashi, Yasuo
    MATERIALS TRANSACTIONS, 2013, 54 (06) : 895 - 898
  • [39] Comparison of Ni/Ti and Ni ohmic contacts on n-type 6H–SiC
    Bohumil Barda
    Petr Macháč
    Marie Hubičková
    Josef Náhlík
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 1039 - 1044
  • [40] On the Formation of Ni-based Ohmic Contacts to n-type 4H-SiC
    Kuchuk, A. V.
    Kladko, V. P.
    Piotrowska, A.
    Ratajczak, R.
    Jakiela, R.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 573 - 576