Impact of External Electronic Perturbations on Single-Walled Carbon Nanotube Electronic Structure: Scanning Tunneling Spectroscopy and Density Functional Theory

被引:2
作者
Taber, Benjamen N. [1 ,2 ]
McDowell, Benjamin W. [1 ]
Mills, Jon M. [1 ,3 ]
Gervasi, Christian F. [1 ,4 ]
Nazin, George V. [1 ]
机构
[1] Univ Oregon, Mat Sci Inst, Oregon Ctr Opt Mol & Quantum Sci, Dept Chem & Biochem, Eugene, OR 97403 USA
[2] Qorvo Inc, 63140 Britta St, Bend, OR 97701 USA
[3] Intel Corp, 2501 NE Century Blvd, Hillsboro, OR 97124 USA
[4] Synopsys Inc, 2025 NE Cornelius Pass Rd, Hillsboro, OR 97124 USA
基金
美国国家科学基金会;
关键词
NANOSTRUCTURED MATERIALS; BAND-GAPS; GRAPHENE; TRANSPORT; AU(111); SURFACE; TRANSISTORS; POTENTIALS; MICROSCOPY; SPECTRA;
D O I
10.1021/acs.jpcc.3c00052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Understanding the local impact of environmental electronic perturbations on the local density of states (LDOS) of single-walled carbon nanotubes (CNTs) is critical for developing CNT-based devices. We present scanning tunneling microscopy and spectroscopy (STM/STS) investigations of CNTs adsorbed on both a metal, Au(111), and a dielectric, monolayer RbI on Au(111), serving as models for stronger and weaker electrostatic interactions, respectively. In both cases, STS revealed modulations in the CNT LDOS corresponding to features in the underlying material. We corroborate our STM/STS results with density functional theory calculations of the electronic structure of semiconducting CNTs in the presence and absence of an external dipole. DFT-calculated CNT LDOS qualitatively matched STM/STS results, providing key insight into the local impact external charges have on CNT electronic structure.
引用
收藏
页码:4651 / 4659
页数:9
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