Photoelectric properties of two-dimensional electron gas at the (Ga0.5Al0.5)2O3/SrTiO3 heterointerfaces

We report a two-dimensional electron gas created at the (Ga0.5Al0.5)(2)O-3/SrTiO3 heterointerfaces with different deposition temperatures and thicknesses by a pulsed laser deposition method. It is found that the critical deposition temperature for the metal-to-insulator transition is about 400 degrees C with a thickness of 43.2 nm. The carrier density and mobility of sample at the deposition temperature of 300 degrees C are 10(12) cm(-2) and 67.2 cm(2) V-1 s(-1) at 50 K, respectively. The thickness of the conductive layer is similar to 4.0 nm estimated from the anisotropic magnetoresistance. The bandgaps of films deposited at different temperatures are in the range of 5.6-5.9 eV. Furthermore, the heterointerfaces have a strong response to 360 nm light with a relative resistance change of similar to 70%. Our results are related to the charge transfer due to the oxygen defect at the interfaces, which provides a way for the development of third-generation semiconductor optoelectronic devices.