Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

被引：0

作者：

Kumar, Akhil S. ^{[1
]}

Uren, Michael J. ^{[1
]}

Pomeroy, James W. ^{[1
]}

Smith, Matthew D. ^{[1
]}

Afroz, Shamima ^{[2
]}

Vasen, Timothy ^{[2
]}

Howell, Robert S. ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, Ctr Device Thermog, HH Wills Phys Lab, Bristol BS8 1TL, England

[2] Northrop Grumman Mission Syst, Linthicum, MD 21090 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 11期

关键词：

Bremsstrahlung; hot electrons; impact ionization; SLCFET; IMPACT IONIZATION; ELECTROLUMINESCENCE; HEMTS; RELIABILITY;

D O I：

10.1109/LED.2023.3311897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot electron effects have been studied in multichannel AlGaN/GaN-based Superlattice Castellated Field Effect Transistors (SLCFET). Current-Voltage (I-V) and simulations could identify channel position-dependent impact ionization within the device fins. Electroluminescence (EL) emission is observed simultaneously with the impact ionization, whose spectral analysis shows the signature of hot electron scattering (Bremsstrahlung radiation) and not electron-hole recombination.

引用

页码：1821 / 1824

页数：4

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