Deep sub-micron Josephson junctions fabricated by using maskless direct writing on 4-inch silicon wafer

被引：1

作者：

Ni, Zhi ^{[1
,2
,3
]}

Zhang, Guofeng ^{[1
,2
]}

Wu, Wentao ^{[1
,2
]}

Wang, Yongliang ^{[1
,2
]}

Rong, Liangliang ^{[1
,2
,3
]}

Wu, Jun ^{[1
,2
,3
]}

Qiu, Longqing ^{[1
,2
,3
]}

Zhang, Shulin ^{[1
,2
,3
]}

Dong, Hui ^{[1
,2
,3
]}

Xie, Xiaoming ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2023年 / 605卷

关键词：

Josephson junction; Deep sub -micron; Maskless; Direct writing lithography; SQUID;

D O I：

10.1016/j.physc.2022.1354204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a double-over-etching (DOE) process for Nb/Al-AlOx/Nb Josephson junctions based on the maskless direct writing lithography (DWL). A family of Josephson junctions with the size ranging from 0.6 to 5 mu m is fabricated on a 4-inch silicon wafer. Due to the DOE, the actual size of Josephson junction is even shrunk to deep sub-micron which is far below the minimum feature size of the DWL. We present the electrical charac-teristics and magnetic field dependency of Josephson junctions, both of which indicate high quality for most of junctions except apparent degradation with size down to 190 nm. We also present the statistical results of junctions across the whole wafer. It demonstrates the reliability and controllability of the process which will be applied in the SQUID fabrication.

引用

页数：6

共 22 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS [J].