Silicon-on-silica waveguides-based all-optical logic gates at 1.55 μm

被引:8
|
作者
Kotb, Amer [1 ,2 ]
Zoiros, Kyriakos E. [3 ]
Li, Wei [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, GPL Photon Lab, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Fayoum, Fac Sci, Dept Phys, Al Fayyum 63514, Egypt
[3] Democritus Univ Thrace, Sch Engn, Dept Elect & Comp Engn, Lightwave Commun Res Grp, Xanthi 67100, Greece
关键词
logic gates; silicon-on-silica; contrast ratio; PHOTONIC CRYSTAL; THEORETICAL-ANALYSIS; LOW-POWER; XOR; PERFORMANCE; DESIGN;
D O I
10.1088/1402-4896/acbb40
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The demand for faster and more efficient integrated photonic circuits has prompted the rise of silicon-on-insulator technology. In this paper, silicon-on-silica waveguides have been employed for the all-optical realization of a complete family of logic gates, including XOR, AND, OR, NOT, NOR, NAND and XNOR operated at 1.55 mu m. This waveguide consists of three identical slots and six microring resonators, all made of silicon patterned on silica. The principle of operation of these logic gates is based on the constructive and destructive interference induced by the phase difference between the input signals. The gates' performance is evaluated against the contrast ratio (CR) metric. Compared to existing waveguides, the proposed waveguides achieve higher CRs with a speed as high as 120 Gb s(-1).
引用
收藏
页数:10
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