Local Background Hole Density Drives Nonradiative Recombination in Tin Halide Perovskites

被引：6

作者：

Westbrook, Robert J. E. ^{[1
]}

Taddei, Margherita ^{[1
]}

Giridharagopal, Rajiv ^{[1
]}

Jiang, Meihuizi ^{[2
,3
]}

Gallagher, Shaun M. ^{[1
]}

Guye, Kathryn N. ^{[1
]}

Warga, Aaron I. ^{[1
]}

Haque, Saif A. ^{[2
,3
]}

Ginger, David S. ^{[1
,4
]}

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[2] Imperial Coll London, Dept Chem, London W12 0BZ, England

[3] Imperial Coll London, Ctr Processable Elect, Mol Sci Res Hub, London W12 0BZ, England

[4] Pacific Northwest Natl Lab, Phys Sci Div, Phys & Computat Sci Directorate, Richland, WA 99352 USA

来源：

ACS ENERGY LETTERS | 2024年 / 9卷 / 02期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

SN(II) OXIDATION; SOLAR-CELLS; PERFORMANCE; EFFICIENCY;

D O I：

10.1021/acsenergylett.3c02701

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We use multimodal microscopy to study carrier recombination in semiconducting tin halide perovskite films based on PEA(0.2)FA(0.8)SnI(3) (PEA = phenethylammonium; FA = formamidinium). We use the observation of pseudo-first-order photoluminescence (PL) decay kinetics to establish a method for quantifying the hole dopant level and nonradiative recombination rate constant. We find that untreated PEA(0.2)FA(0.8)SnI(3) films exhibit large hole doping concentrations of p(0) approximate to 10(19) cm(-3), which is reduced to p(0) approximate to 10(16) cm(-3) after SnF2 treatment. While it is well-known that the radiative recombination rates are increased with p(0), we reveal that the nonradiative rate is also increased. We find that p-type regions in untreated PEA(0.2)FA(0.8)SnI(3) films are centers for nonradiative recombination, which are diminished in films with p(0) approximate to 10(16) cm(-3). We discover significant PL heterogeneity even in PEA(0.2)FA(0.8)SnI(3) films with moderate dopant levels, suggesting that new strategies to eliminate deleterious defects in PEA(0.2)FA(0.8)SnI(3) must be developed.

引用

页码：732 / 739

页数：8

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