Colloidal III-V quantum dots: a synthetic perspective

被引:5
作者
Gazis, Theodore A. [1 ]
Cartlidge, Ashleigh J. [1 ]
Matthews, Peter D. [1 ]
机构
[1] Keele Univ, Sch Chem & Phys Sci, Newcastle Under Lyme ST5 5BG, England
基金
英国工程与自然科学研究理事会;
关键词
NANOCRYSTALLINE INDIUM NITRIDE; SINGLE-SOURCE PRECURSOR; HIGHLY LUMINESCENT INP; SIZE-TUNABLE SYNTHESIS; OPTICAL-PROPERTIES; GALLIUM-ARSENIDE; LOW-TEMPERATURE; ORGANOMETALLIC SYNTHESIS; RAPID SYNTHESIS; GAAS;
D O I
10.1039/d2tc05234b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the advent of stricter environmental regulation, quantum dots based on cadmium, lead and other heavy metals have become anathema. III-V semiconductors constitute a promising alternative because they not only match but indeed surpass the optoelectronic properties of classical quantum dot systems. Despite this fact, III-V semiconductors are no panacea. Their exacting synthesis is a major hurdle hampering widespread adoption. Several groups have risen to this synthetic challenge, resulting in a plethora of publications. In this perspective, we compile the disparate routes to III-V quantum dots and concisely present them, with pertinent examples for each synthetic methodology. This has allowed us to identify gaps in the field, which we highlight as perspectives in the conclusion.
引用
收藏
页码:3926 / 3935
页数:10
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