Analysis of the Effect of Graphene, Metal, and Metal Oxide Transparent Electrodes on the Performance of Organic Optoelectronic Devices

被引:6
|
作者
Chen, Ziqiang [1 ]
Wang, Zhenyu [2 ]
Wang, Jintao [1 ]
Chen, Shuming [1 ]
Zhang, Buyue [1 ]
Li, Ye [1 ]
Yuan, Long [3 ]
Duan, Yu [1 ,2 ]
机构
[1] Changchun Univ Sci & Technol, Coll Phys, Changchun 130013, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[3] Jilin Normal Univ, Coll Phys, Minist Educ, Key Lab Funct Mat Phys & Chem, Changchun 130103, Peoples R China
基金
对外科技合作项目(国际科技项目); 中国国家自然科学基金;
关键词
transparent electrodes; organic optoelectronic devices; graphene; ultrathin metal; oxide-metal-oxide structure; LIGHT-EMITTING-DIODES; PEROVSKITE SOLAR-CELLS; INDIUM TIN OXIDE; CONDUCTING ELECTRODES; SILVER ELECTRODES; ULTRA-THIN; MULTILAYER; FILM; LAYER; POLYMER;
D O I
10.3390/nano13010025
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transparent electrodes (TEs) are important components in organic optoelectronic devices. ITO is the mostly applied TE material, which is costly and inferior in mechanical performance, and could not satisfy the versatile need for the next generation of transparent optoelectronic devices. Recently, many new TE materials emerged to try to overcome the deficiency of ITO, including graphene, ultrathin metal, and oxide-metal-oxide structure. By finely control of the fabrication techniques, the main properties of conductivity, transmittance, and mechanical stability, have been studied in the literatures, and their applicability in the potential optoelectronic devices has been reported. Herein, in this work, we summarized the recent progress of the TE materials applied in optoelectronic devices by focusing on the fabrication, properties, such as Graphene, ultra-thin metal film, and metal oxide and performance. The advantages and insufficiencies of these materials as TEs have been summarized and the future development aspects have been pointed out to guide the design and fabrication TE materials in the next generation of transparent optoelectronic devices.
引用
收藏
页数:20
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