High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field

In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically increased barrier width under magnetic field (B) and electric field (F). All calculations are completed using the finite element method under the effective mass approximation. The electric field's polarity (+/-) changes the probability density of wavefunctions. For B = 0, F = 5 kV/cm (particularly for the difference between energy levels (E-fi)) is a critical value. Whereas the Efi value decreases between 40 <F < 5 kV/cm, then it increases in the range of 5<F < 40 kV/cm. This change causes a red or blue shift in the optical spectrum. We also see that F = 40 kV/cm causes a change in the transition energies of the structure more than F = 40 kV/cm. The confinement of electrons under applied magnetic fields occurs in the center of the superlattice. The NOR, SHG, and THG coefficients can be adjusted over a wide energy range and size of the resonance peak with changes in the F and B values. It is believed that with the combined effect of the electric and magnetic fields, the electrooptical properties of the superlattices can be tuned for the desirable property of semiconductor optical device applications.