Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

被引：3

作者：

Yi, Xin ^{[1
]}

Greener, Zoe ^{[1
]}

Fleming, Fiona ^{[1
]}

Kirdoda, Jaroslaw ^{[2
]}

Dumas, Derek C. S. ^{[2
]}

Saalbach, Lisa ^{[1
]}

Muir, Dave A. S. ^{[1
]}

Ferre-Llin, Lourdes ^{[2
]}

Millar, Ross W. ^{[2
]}

Paul, Douglas J. ^{[2
]}

Buller, Gerald S. ^{[1
]}

机构：

[1] Heriot Watt Univ, Inst Photon & Quantum Sci, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Scotland

[2] Univ Glasgow, James Watt Sch Engn, Glasgow G12 8LT, Scotland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

Single-photon avalanche diode; Ge-on-Si; photon counting; afterpulsing; time-correlated single-photon counting; short-wave infrared; QUANTUM KEY DISTRIBUTION; PHOTODIODES; DESIGN;

D O I：

10.1109/LPT.2023.3289653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigate afterpulsing in 26 and 100 mu m diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 mu s and temperature of 78 K, and 130 mu s at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 mu m. We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.

引用

页码：959 / 962

页数：4

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