Three-Dimensional Anisotropic Carrier Mobility and Structure-Property Relationships for [1]Benzothieno[3,2-b][1]benzothiophene Derivatives: A Theoretical Study

被引:0
|
作者
Huang, Jin-Dou [1 ,2 ]
Chai, Shuo [1 ]
Lin, Feng [1 ]
Ma, Huipeng [3 ]
机构
[1] Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China
[2] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
[3] Dalian Med Univ, Coll Med Lab Sci, Dalian 116044, Peoples R China
基金
美国国家科学基金会;
关键词
1]benzothieno[3; 2-b][1]benzothiophene; intrinsic mobility; three-dimensional distributions; first-principles; substitution effect; CHARGE-TRANSPORT; TRANSISTORS;
D O I
10.1021/acsaelm.3c00382
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Through the Marcus electron-transfer theory combined with the random walk technique for the charge-carrier diffusion process, we simulated the three-dimensional (3D) distributions of hole and electron mobilities for [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and its derivatives. Our predicted mobility ranges agree well with the measured fieldeffect mobility of the BTBT derivatives. We further analyzed the charge-transfer mobility anisotropy of the studied compounds, and the optimum conducting-channel direction relative to the crystal axis was determined, which provides a reliable reference to assist in the performance optimization of field-effect transistors (FETs). Moreover, we analyzed in detail the influences of different substituents on the reorganization energies, ionization energies, electron affinities, frontier molecular orbital charge distributions, and solid-state packing motifs of the BTBT. It was found that the reorganization energies and energy barrier of charge injection effectively decreased with the fusion of the thiophene ring. However, the herringbone packing of BTBT is transformed to pi stacking at a local site; as a result, the hole and electron mobilities of BTBT decreased slightly. In comparison, attaching electron-withdrawing -COPhF to BTBT not only increases the electron affinities significantly but also increases the electronic couplings and decreases the reorganization energy related to the electron transfer. It provides a promising way to design n-type or ambipolar organic semiconducting materials.
引用
收藏
页码:2902 / 2911
页数:10
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