Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy

被引：7

作者：

Bradford, Jonathan ^{[1
]}

Cheng, Tin S. ^{[1
]}

James, Tyler S. S. ^{[1
]}

Khlobystov, Andrei N. ^{[2
]}

Mellor, Christopher J. ^{[1
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Novikov, Sergei, V ^{[1
]}

Beton, Peter H. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England

[3] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba 3050044, Japan

来源：

2D MATERIALS | 2023年 / 10卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

graphene nanoribbons; hexagonal boron nitride; lateral heterostructure; conductive AFM; molecular beam epitaxy; nanoparticle etching; HEXAGONAL BORON-NITRIDE; EMBEDDED GRAPHENE; HETEROSTRUCTURES; INTERFACE; INTERFERENCE;

D O I：

10.1088/2053-1583/acdefc

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High-resolution atomic force microscopy (AFM) reveals that GNRs grow epitaxially from the etched hBN edges, and merge to form a GNR network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.

引用

页数：10

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