Polarization resistance of Pt/YSZ and ITO/YSZ interfaces in multilayered Pt|YSZ|Pt and ITO|YSZ|ITO thin films

被引:5
作者
Ravindranath, Nair Afijith [1 ,4 ]
Clinsha, P. C. [1 ]
Pandian, Ramanathaswamy [2 ,4 ]
Natarajan, Gomathi [2 ]
Bahuguna, Ashok [2 ]
Abhaya, S. [2 ,4 ]
Sivaraman, N. [3 ,4 ]
Gnanasekar, K. I. [1 ,4 ,5 ]
机构
[1] Indira Gandhi Ctr Atom Res, Mat Chem & Met Fuel Cycle Grp, Mat Chem Div, Kalpakkam 603102, Tamilnadu, India
[2] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamilnadu, India
[3] Indira Gandhi Ctr Atom Res, Mat Chem & Met Fuel Cycle Grp, Kalpakkam 603102, Tamilnadu, India
[4] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400094, India
[5] Indira Gandhi Ctr Atom Res, Mat Chem & Met Fuel Cycle Grp, Mat Chem Div, Novel Chem Sensor Sect, Kalpakkam 603102, India
关键词
Multilayered thin film; Pulsed laser deposition; Electrochemical impedance; Yttria stabilized zirconia; Conductivity in sandwiched configuration and; polarization resistance; YTTRIA-STABILIZED ZIRCONIA; OXYGEN SENSORS; IONIC-CONDUCTIVITY; ELECTRICAL-PROPERTIES; ELECTRODE; GRAIN; IMPEDANCE; SPECTROSCOPY; SYSTEM;
D O I
10.1016/j.surfin.2023.102700
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polarization resistances across Pt/YSZ and ITO/YSZ interfaces were probed on thin film structures with large surface area to volume ratio. High polarization resistance of Pt/YSZ interface responsible for the operating temperature of 873 K is suppressed in ITO/YSZ by atleast three orders of magnitude due to the partial solubility of an electronic conductor ITO in YSZ with the scope for reduction in temperatures to about 673 K. The con-ductivity of YSZ thin films measured in sandwiched configuration with Pt and ITO electrodes for the temperature interval of 673 - 973 K for multilayers configured as Pt|YSZ|Pt and ITO|YSZ|ITO were compared. Textured thin films of Pt, ITO and 8 mol% of Yttria stabilized zirconia (YSZ) exhibiting columnar growth were deposited on (100) SrTiO3.
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页数:14
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