Nanowire Transistors: The Next Step for the Low-Power Digital Technology

被引:2
作者
Ajitha, D. [1 ]
Vijaya Lakshmi, K. N. V. S. [2 ]
Bhagya Lakshmi, K. [3 ]
机构
[1] Sreenidhi Inst Sci & Technol, Dept ECE, Hyderabad, Telangana, India
[2] Sri Vasavi Engn Coll, Dept ECE, Tadepalligudem, India
[3] Sasi Inst Technol & Engn, Dept ECE, Tadepalligudem, India
关键词
International Roadmap for Devices (IRDS); Nanowire (NW); Field Effect Transistor (FET); gate all-around (GAA) transistor; density and low-power digital technology; applications of nanowires; FIELD-EFFECT TRANSISTORS; SILICON NANOWIRES; GATE; GROWTH; ARRAYS; PERFORMANCE; ENERGY; MOSFET; SCALE; NANOTUBES;
D O I
10.1080/03772063.2021.1972845
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As conventional Complementary Metal Oxide Semiconductor (CMOS) reaches extreme limitation to implement the digital circuits with high density and low power dissipation, alternate devices are necessary. To keep Moore's Law alive and to implement the processors with tiny devices, the researchers are trying to produce nano-devices, alternatives to conventional devices. Nanowire is a most prominent device to replace the CMOS at nano-scale for the low-power digital technology among the emerging Nanodevices. Transistors designed with Nanowire structures achieve a tradeoff between the power and density to implement the digital circuits. This paper is focused on reviewing the details of the synthesis of nanowire, few dominant applications of the nanowire, and nanowire mechanics. Initially, the growth pattern and controlling the Nanowire dimensions are discussed under the synthesis of nanowire. This is followed by a brief overview of nano-photonics which plays a key role in optical communications. Further, the mechanical properties, applications of nanowire, and the gate structures are highlighted.
引用
收藏
页码:5549 / 5565
页数:17
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