Growth of Nitrides on Nearly Lattice-Matched Substrate ScAlMgO4 and its Application

被引：0

作者：

Matsuoka, Takashi ^{[1
]}

Yahara, Hirotaka ^{[2
]}

Hagiwara, Chihiro ^{[2
]}

Iwabuchi, Takuya ^{[2
]}

Kimura, Takeshi ^{[1
]}

机构：

[1] New Ind Creat Hatchery Ctr, Sendai, Miyagi, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan

来源：

2023 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK | 2023年

关键词：

component; Nitride semiconductors; ScAlMgO4; LED; Epitaxial Growtht; GAN; SAPPHIRE;

D O I：

10.1109/IMFEDK60983.2023.10366342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although nitride semiconductors practically used for light-emitting devices and high-frequency and high-power devices, there is no low-cost and large GaN wafer commercially available., the GaN growth on ScAlMgO4 substrates instead of GaN substrate, which has been expected to be a nearly lattice-matched substrate since the 1990s, is described. Its main points are the growth method of GaN, considering its weak property to a reducing atmosphere. The method preventing the impurity penetration from SCAM into GaN is also explained. As an application of SCAM substrates, a light-emitting-diode fabricated on SCAM substrate is demonstrated.

引用

页数：4

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