Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

被引：12

作者：

Yang, Yusheng ^{[1
]}

Cao, Zelin ^{[2
]}

Mao, Shuangsuo ^{[1
]}

Qin, Jiajia ^{[1
]}

Rao, Zhaowei ^{[1
]}

Liu, Mingnan ^{[1
]}

Ke, Chuan ^{[3
]}

Zhao, Yong ^{[1
,3
]}

Sun, Bai ^{[2
]}

机构：

[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China

[2] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol FIST, Xian 710049, Shaanxi, Peoples R China

[3] Southwest Jiaotong Univ, Sch Elect Engn, Key Lab Magnet Suspens Technol & Maglev Vehicle, Minist Educ, Chengdu 610031, Peoples R China

来源：

APPLIED MATERIALS TODAY | 2023年 / 35卷

基金：

中国国家自然科学基金;

关键词：

Resistive switching; ABO(3) perovskite; Heterojunction; Interface effect; Mechanism analysis; Artificial intelligence; FILM; PEROVSKITE;

D O I：

10.1016/j.apmt.2023.101938

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is well-known that memristive devices can be applied to brain-like parallel computing, but the interface effects have an indelible impact on memristive performance. In this work, two memristive devices with Ag/CTO/SMTO/Ti and Ag/SMTO/CTO/Ti structures were fabricated based on the heterojunctions between CaTiO3 (CTO) and Mn-doped SrTiO3 (SMTO). By comparison, the Ag/CTO/SMTO/Ti device shows relatively improved memristive characteristics with the optimum sweeping voltage of 1.2 V and the switching ratio of similar to 12. That is to say, changing the heterojunction order between CTO and SMTO can regulate the memristive behaviors of the device because the interface effect caused by heterojunction contact has influence on the particle migration, resulting in different rates of conductive filaments formation, so that the memristive characteristics of the device can be regulated. Finally, the resistive switching (RS) characteristics of the device are explained by in-depth mechanism analysis based on fitting experimental data. Therefore, this work not only provides a feasible method for improving the memristive characteristics of the device, but also helps to understand the influence of the interface effect on the particles motion, thereby laying the foundation for the preparation of high-capacity and efficient memristive device in artificial intelligence (AI) applications.

引用

页数：9

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