An Active Resistor for Ultra Low Power Applications

被引：1
|
作者：
Cavallaro, Marco [1 ]
Nicollini, Germano [2 ]
机构：
[1] WBL Connect IP, STMicroelecron MCD, I-95121 Catania, Italy
[2] STMicroelecron AMS, Res & Dev Dept, I-20010 Cornaredo, Italy
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2023年 / 70卷 / 11期
关键词：
Resistors; Transistors; Standards; Resistance; Low-power electronics; Topology; Mathematical models; Diffused resistor; poly resistor; active resistor; MOS-resistor; pre-distortion technique; ultra-low power circuit; low-voltage application; CMOS technology; FLOATING RESISTOR; CMOS;
D O I：
10.1109/TCSI.2023.3305407
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper regards a new active resistor for ultra-low power applications. Thanks to the chosen topology, based on feedback and operational amplifier, it allows to accurately emulate the voltage versus current characteristic (V-I) of a component with respect to the process, temperature and power supply variations. Furthermore, using a transistor in a series configuration as reference, it is possible to obtain very high resistance values with up to 10 times less area with respect to the resistors available in standard complementary metal-oxide-semiconductor (CMOS) technology. The circuit has been simulated using 1.2-V transistors of a 130nm CMOS technology. Compared with a standard p+ poly-silicon resistors, it exhibits equivalent performance parameters using less area.
引用
收藏
页码：4418 / 4425
页数：8
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