Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

被引:10
作者
Piva, F. [1 ]
Grigoletto, M. [1 ]
Brescancin, R. [1 ]
De Santi, C. [1 ]
Buffolo, M. [1 ]
Ruschel, J. [2 ]
Glaab, J. [2 ]
Vidal, D. Hauer [3 ]
Guttmann, M. [2 ,3 ]
Rass, J. [2 ]
Einfeldt, S. [2 ]
Susilo, N. [3 ]
Wernicke, T. [3 ]
Kneissl, M. [2 ,3 ]
Meneghesso, G. [1 ]
Zanoni, E. [1 ]
Meneghini, M. [1 ,4 ]
机构
[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[2] Ferdinand Braun Inst FBH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[3] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany
[4] Univ Padua, Dept Phys & Astron, I-35131 Padua, Italy
关键词
LIGHT-EMITTING-DIODES; YELLOW LUMINESCENCE; GALLIUM VACANCIES; DIFFUSION;
D O I
10.1063/5.0142054
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the impact of Mg-doping on the performance and degradation kinetics of AlGaN-based UV-C light-emitting diodes (LEDs). By comparing LEDs from three wafers with different nominal doping levels [Mg/(Al+Ga) ratio: 0.15%, 0.5%, and 1% in the gas phase during epitaxy] in the AlGaN:Mg electron-blocking layer (EBL), we demonstrate the following results: (i) A higher Mg-doping in the EBL results in a higher optical power at low current levels, which is ascribed to an increased hole injection efficiency. (ii) The reduction of the optical power follows a non-exponential trend, which can be reproduced by using the Hill's formula and is ascribed to the generation/activation of defects within the quantum wells. (iii) A higher Mg-doping in the EBL mitigates the degradation rate. An interpretation of the experimental data is proposed, assuming that hydrogen, which is present in and moving from the EBL, can reduce the rate of de-hydrogenation of point defects in the active region, which is responsible for degradation.
引用
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页数:5
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