Low-temperature reactive spark plasma sintering of dense SiC-Ti3SiC2 ceramics

被引:10
作者
Podbolotov, Kirill [1 ,2 ,6 ]
Moskovskikh, Dmitry [2 ,3 ]
Abedi, Mohammad [2 ]
Suvorova, Veronika [2 ]
Nepapushev, Andrey [2 ]
Ostrikov, Kostya Ken [4 ]
Khort, Alexander [5 ]
机构
[1] Natl Acad Sci Belarussian, Phys Tech Inst, Minsk 220141, BELARUS
[2] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[3] Moscow Polytech Univ, Moscow 107023, Russia
[4] Queensland Univ Technol, Ctr Mat Sci, Sch Chem & Phys, Brisbane 4000, Australia
[5] KTH Royal Inst Technol, SE-10044 Stockholm, Sweden
[6] Natl Acad Sci Belarussian, Phys Tech Inst, Minsk 220141, BELARUS
关键词
Spark plasma sintering; Silicon carbide; MAX phase; Ceramics; Microstructures; Mechanical properties; SILICON-CARBIDE; SIC/SIC COMPOSITES; SIC CERAMICS; MICROSTRUCTURE; STRENGTH; TI3SIC2; CARBON; DENSIFICATION; FABRICATION; OXIDATION;
D O I
10.1016/j.jeurceramsoc.2022.11.036
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SiC-based ceramics are of great interest for various advanced applications. However, its fabrication requires high -temperature treatment at-2000 - 2100 degrees C. In this study, we developed an approach based on low-temperature reactive spark plasma sintering to produce dense SiC-based ceramics with superior mechanical properties. It was found that an SPS temperature of 1600 degrees C and introduction of 10 - 15 wt% of mechanically activated non-oxide Ti-Si-C additive is required to manufacture ceramics with a theoretical density of higher than 90%. Nonetheless, employing 5 - 15 wt% of the additive mixture and an SPS temperature of 1700 degrees C, the maximum density of -98% was achieved. The controlled formation and decomposition of the in-situ Ti3SiC2 MAX phase enables the fabrication of the engineering ceramics with enhanced compressive strength (550 MPa), elastic modulus (485 GPa), and microhardness (32 GPa), which are comparable to the best-reported SiC ceramics. The study has a significant potential for practical application in the production of advanced SiC-based ceramics for various purposes and could be used for further understanding and development of the high-temperature sintering methods.
引用
收藏
页码:1343 / 1351
页数:9
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