Universal radiation tolerant semiconductor

被引:61
作者
Azarov, Alexander [1 ]
Fernandez, Javier Garcia [1 ]
Zhao, Junlei [2 ]
Djurabekova, Flyura [3 ]
He, Huan [3 ]
He, Ru [3 ]
Prytz, Oystein [1 ]
Vines, Lasse [1 ]
Bektas, Umutcan [4 ]
Chekhonin, Paul [4 ]
Klingner, Nico [4 ]
Hlawacek, Gregor [4 ]
Kuznetsov, Andrej [1 ]
机构
[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, POB 1048, N-0316 Oslo, Norway
[2] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
[3] Univ Helsinki, Dept Phys, POB 43, Helsinki 00014, Finland
[4] Helmholtz Zentrum Dresden Rossendorf, D-01328 Dresden, Germany
基金
芬兰科学院;
关键词
MOLECULAR-DYNAMICS; ION-IMPLANTATION; GALLIUM OXIDE; DAMAGE; CRYSTAL; RBS;
D O I
10.1038/s41467-023-40588-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (& gamma;/& beta;) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in & gamma;-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the & beta;-to-& gamma; Ga2O3 transformation, as a function of the increased disorder in & beta;-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that & gamma;/& beta; double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors. Here authors show that gamma/beta double polymorph Ga2O3 structures exhibit unprecedently high radiation tolerance accommodating disorder equivalent to hundreds of displacements per atom. Thus, such Ga2O3 structures benchmark a new class of radiation tolerant semiconductors.
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页数:8
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共 35 条
[1]   Structural transition and recovery of Ge implanted β-Ga2O3 [J].
Anber, Elaf A. ;
Foley, Daniel ;
Lang, Andrew C. ;
Nathaniel, James ;
Hart, James L. ;
Tadjer, Marko J. ;
Hobart, Karl D. ;
Pearton, Stephen ;
Taheri, Mitra L. .
APPLIED PHYSICS LETTERS, 2020, 117 (15)
[2]   Effect of implanted species on thermal evolution of ion-induced defects in ZnO [J].
Azarov, A. Yu ;
Hallen, A. ;
Du, X. L. ;
Rauwel, P. ;
Kuznetsov, A. Yu. ;
Svensson, B. G. .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (07)
[3]   Disorder-Induced Ordering in Gallium Oxide Polymorphs [J].
Azarov, Alexander ;
Bazioti, Calliope ;
Venkatachalapathy, Vishnukanthan ;
Vajeeston, Ponniah ;
Monakhov, Edouard ;
Kuznetsov, Andrej .
PHYSICAL REVIEW LETTERS, 2022, 128 (01)
[4]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[5]   RBS-channeling studies on damage production by MeV ion implantation in Si(111) wafers [J].
Cheang-Wong, JC ;
Crespo-Sosa, A ;
Oliver, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (03) :205-210
[6]   Interplay between atomic disorder, lattice swelling, and defect energy in ion-irradiation-induced amorphization of SiC [J].
Debelle, A. ;
Boulle, A. ;
Chartier, A. ;
Gao, F. ;
Weber, W. J. .
PHYSICAL REVIEW B, 2014, 90 (17)
[7]   Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3 [J].
Garcia-Fernandez, J. ;
Kjeldby, S. B. ;
Nguyen, P. D. ;
Karlsen, O. B. ;
Vines, L. ;
Prytz, O. .
APPLIED PHYSICS LETTERS, 2022, 121 (19)
[8]   Ion implantation and thermal annealing in silicon carbide and gallium nitride [J].
Jiang, W ;
Weber, WJ ;
Thevuthasan, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 :204-208
[9]   RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions [J].
Khalil A.S. ;
Didyk A.Y. .
Physics of Particles and Nuclei Letters, 2009, 6 (6) :498-504
[10]   Radiation damage effects in Ga2O3 materials and devices [J].
Kim, Jihyun ;
Pearton, Stephen J. ;
Fares, Chaker ;
Yang, Jiancheng ;
Ren, Fan ;
Kim, Suhyun ;
Polyakov, Alexander Y. .
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (01) :10-24