Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells

In this research, we compared the performance of commercial mu-LEDs and three-layered staggered QW mu-LED arrays. We also investigated the self-heating effect. We proposed a green micro-resonant cavity light-emitting diode (mu-RCLED) that consists of a three-layer staggered InGaN with multiple quantum wells (MQWs), a bottom layer of nanoporous n-GaN distributed Bragg reflectors (DBRs), and a top layer of Ta2O5/SiO2 DBRs. We systematically performed simulations of the proposed mu-RCLEDs. For the InGaN MQWs with an input current of 300 mA, the calculated wavefunction overlaps are 8.8% and 18.1% for the regular and staggered structures, respectively. Furthermore, the staggered MQWs can reduce the blue-shift of electroluminescence from 10.25 nm, obtained with regular MQWs, to 2.25 nm. Due to less blue-shift, the output power can be maintained even at a high input current. Conversely, by employing 6.5 pairs of Ta2O5/SiO2 DBRs stacks, the full width at half maximum (FWHM) can be significantly reduced from 40 nm, obtained with ordinary mu-LEDs, to 0.3 nm, and a divergence angle smaller than 60 degrees can be obtained. Our simulation results suggest that the mu-RCLEDs can effectively resolve the wavelength instability and color purity issues of conventional mu-LEDs.