Developing Nanosensors with Silicon Nanowires

被引:1
作者
Kim, Bruce [1 ]
Aleem, Mahaboobbatcha [2 ]
Kundu, Sharmistha [1 ]
Park, Jongyvon [3 ]
机构
[1] CUNY, Dept Elect Engn, New York, NY 10031 USA
[2] CUNY, New York, NY 10031 USA
[3] Korea Res Inst Ships & Ocean Engn Republ Korea, Daejeon, South Korea
来源
2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO | 2023年
关键词
LABEL-FREE; REAL-TIME; FABRICATION;
D O I
10.1109/NANO58406.2023.10231275
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper discusses reliable fabrication techniques, contamination elimination, and photolithography for silicon nanowire-based sensors. The selection of solvents for contamination removal is discussed. The challenges of integrating SiNWs (silicon nanowires) with honeycomb sensor arrays are also addressed. The successful integration of SiNWs with a sensor array was confirmed through FESEM and IV analysis.
引用
收藏
页码:1066 / 1069
页数:4
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