Coating of Si3N4 with HAp via atomic layer deposition

被引:1
作者
Akin, Seniz R. Kushan [1 ]
机构
[1] Cankaya Univ, Dept Mat Sci & Engn, Ankara, Turkiye
来源
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2023年 / 24卷 / 04期
关键词
Silicon nitride; Atomic layer deposition; Hydroxyapatite; SILICON-NITRIDE; TITANIUM; BIOACTIVITY; GROWTH; PEEK;
D O I
10.36410/jcpr.2023.24.4.736
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on the market for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications where load-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageous for various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition (ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystalline HAp after heat treatment at 500 degrees C. The bioactivity assessment made by immersing the coated film in SBF revealed HAp formation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one.
引用
收藏
页码:736 / 741
页数:6
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