Grain boundary engineering strategy for simultaneously reducing the electron concentration and lattice thermal conductivity in n-type Bi2Te2.7Se0.3-based thermoelectric materials

被引:11
|
作者
Lee, Seunghyeok [1 ,2 ]
Jung, Sung-Jin [1 ]
Park, Gwang Min [1 ,3 ]
Hong, Junpyo [4 ,5 ]
Lee, Albert S. [4 ,5 ]
Baek, Seung-Hyub [1 ]
Kim, Heesuk [6 ]
Park, Tae Joo [2 ]
Kim, Jin-Sang [7 ]
Kim, Seong Keun [1 ,3 ]
机构
[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 02792, South Korea
[2] Hanyang Univ, Dept Mat Sci & Chem Engn, Ansan 15588, South Korea
[3] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea
[4] Korea Inst Sci & Technol, Mat Architecturing Res Ctr, Seoul 02792, South Korea
[5] Korea Inst Sci & Technol, Convergence Res Ctr Solut Electromagnet Interferen, Seoul 02792, South Korea
[6] Korea Inst Sci & Technol, Soft Hybrid Mat Res Ctr, Seoul 02792, South Korea
[7] Inst Adv Composite Mat, Korea Inst Sci & Technol, Wonju 55324, South Korea
基金
新加坡国家研究基金会;
关键词
Thermoelectric materials; Grain boundary engineering; Carrier concentration; Atomic layer deposition; N-type Bi2Te2.7Se0.3 (BTS); HIGH-PERFORMANCE; BI2TE3; FIGURE; NANOCOMPOSITES; BISMUTH; ZT;
D O I
10.1016/j.jeurceramsoc.2023.02.017
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study demonstrates atomic layer deposition (ALD) of an extremely thin Al2O3 layer over n-type Bi2Te2.7Se0.3 to alleviate the adverse effects of multiple boundaries on their thermoelectric performance. Multiple boundaries reduce thermal conductivity (kappa), but generate electrons, deviating from the optimum carrier concentration. Only one Al2O3 ALD cycle effectively suppresses Te volatilization at the grain boundaries, resulting in a decrease from 5.8 x 10(19)/cm(3) to 3.6 x 10(19)/cm(3) in the electron concentration. Concurrently, the one-cycle-Al2O3 coating produces fine grains, thus inducing numerous boundaries, ultimately suppressing the lattice kappa from 0.64 to 0.33 W/m center dot K. A further increase in the number of Al2O3 cycles leads in a significant rise in the resistance, resulting in degradation of thermoelectric performance. Consequently, the ZT value is increased by 51 % as a result of Al2O3 coating with a single ALD cycle. Our approach offers new insights into the simultaneous reduction of the kappa and electron concentration in n-type Bi2Te3-based materials.
引用
收藏
页码:3376 / 3382
页数:7
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