Studies of structural, dielectric, electrical, and optical properties of CaBiLaNbVO9 for electronic device application

The solid-state reaction route created the lead-free dielectric material CaBiLaNbVO9 at a high temperature. The polycrystalline compound belongs to a monoclinic crystal structure having dimensions a = 10.6738 & Aring;, b = 10.4488 & Aring;, c = 7.1793 & Aring;, and V = 798.04 & Aring;(3). The grain size is calculated to be 1.1029 mu m. The doping of La3+ at the Bi-site and divalent cation Ca2+ substituted at site-A and Nb5+, V5+ in the site-B of ABO(3) has considerably modified the structural, dielectric, and electrical conduction mechanism. The study of ac conductivity (frequency-temperature characteristics) shows CBH (correlated barrier hopping) and NSPT (non-overlapping small polaron tunneling) conduction mechanisms. Non-Debye type relaxation has been observed using impedance analysis. The modulus and impedance study have been used to confirm the short-range order of charge carriers. The average transmittance of the compound is about 82-84%, and absorption is in the range of 0.1-1.0% in the visible area applicable for transparent conductive oxide. The energy band gap is 2.73 eV. The analysis of the resistive and capacitive properties indicates the material is an electronic component for the creation of devices.