Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices

被引：0

作者：

Liao, Ruo-Yin ^{[1
]}

Chen, Hsuan-Han ^{[1
]}

Lin, Ping-Yu ^{[2
]}

Liang, Ting-An ^{[2
]}

Su, Kuan-Hung ^{[2
]}

Lin, I-Cheng ^{[2
]}

Wen, Chen-Hao ^{[3
]}

Chou, Wu-Ching ^{[1
]}

Hsu, Hsiao-Hsuan ^{[2
]}

Cheng, Chun-Hu ^{[3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Natl Taipei Univ Technol, Inst Mat Sci & Engn, Taipei 10608, Taiwan

[3] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei 10610, Taiwan

来源：

MATERIALS | 2023年 / 16卷 / 09期

关键词：

ferroelectric; HfZrO; hysteresis loop; reliability; THIN-FILMS; FIELD;

D O I：

10.3390/ma16093306

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 mu C/cm(2), and a polarization current with a peak value of 159.98 mu A. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >-2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

引用

页数：10

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