Ferroelectricity and Oxide Reliability of Stacked Hafnium-Zirconium Oxide Devices

被引：0

作者：

Liao, Ruo-Yin ^{[1
]}

Chen, Hsuan-Han ^{[1
]}

Lin, Ping-Yu ^{[2
]}

Liang, Ting-An ^{[2
]}

Su, Kuan-Hung ^{[2
]}

Lin, I-Cheng ^{[2
]}

Wen, Chen-Hao ^{[3
]}

Chou, Wu-Ching ^{[1
]}

Hsu, Hsiao-Hsuan ^{[2
]}

Cheng, Chun-Hu ^{[3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Natl Taipei Univ Technol, Inst Mat Sci & Engn, Taipei 10608, Taiwan

[3] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei 10610, Taiwan

来源：

MATERIALS | 2023年 / 16卷 / 09期

关键词：

ferroelectric; HfZrO; hysteresis loop; reliability; THIN-FILMS; FIELD;

D O I：

10.3390/ma16093306

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 mu C/cm(2), and a polarization current with a peak value of 159.98 mu A. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >-2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.

引用

页数：10

共 32 条

[1] Böscke TS, 2011, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
[2] Ferroelectricity in hafnium oxide thin films
Boescke, T. S.
Mueller, J.
Braeuhaus, D.
Schroeder, U.
Boettger, U.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (10)
[3] Effects of scaling the film thickness on the ferroelectric properties of SrBi2Ta2O9 ultra thin films
Celinska, J
Joshi, V
Narayan, S
McMillan, L
de Araujo, CP
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3937 - 3939
[4] Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
Chen, Hsuan-Han
Liao, Ruo-Yin
Chou, Wu-Ching
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Huang, Ching-Chien
[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 947 - 952
[5] Cheng C.H., 2016, P 2016 S VLSI TECHN, pT150
[6] Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
Cheng, Chun-Hu
Lin, Ming-Huei
Chen, Hsin-Yu
Fan, Chia-Chi
Liu, Chien
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2019, 13 (05):
[7] Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor
Cheng, Chun-Hu
Fan, Chia-Chi
Tu, Chun-Yuan
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (01) : 825 - 828
[8] Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory
Cheng, Chun-Hu
Chiu, Yu-Chien
Liou, Guan-Lin
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (10):
[9] Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Cheng, Chun-Hu
Chin, Albert
[J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) : 138 - 140
[10] Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancement
Chiu, Yu-Chien
Cheng, Chun-Hu
Liou, Guan-Lin
Chang, Chun-Yen
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3498 - 3501

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