Radiation Formation of Interlayer Bridges in Bilayer Graphene

The radiation formation of interlayer bridges in bilayer graphene has been studied with the nonorthogonal tight binding model. It has been shown that most (similar to 85%) of the formed bridges have a low thermal stability excluding their application in elements of graphene electronics working at room temperature. Three types of stable bridges with the annealing activation energies of 1.50, 1.52, and 2.44 eV have been revealed. Estimates by the Arrhenius formula have shown that these bridge types have macroscopic lifetime at room temperature. It has been found that the radiation formation of bridges in bilayer graphene significantly differs from a similar process in graphite.