Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature

被引:1
作者
Ning, Xiang [1 ]
Wu, Nanxing [1 ,2 ]
Zhong, Mengjuan [1 ]
Wen, Yuwei [1 ]
Li, Bin [1 ]
Jiang, Yi [1 ]
机构
[1] Jingdezhen Ceram Univ, Sch Mech & Elect Engn, Jingdezhen 333403, Peoples R China
[2] Lab Ceram Mat Proc Technol Engn, Jingdezhen 333403, Peoples R China
基金
中国国家自然科学基金;
关键词
3C-SiC; nanoindentation; temperature; stress strain; dislocation evolution;
D O I
10.3390/nano13020235
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal sample further during the nano-indentation loading process. A simulation test platform for diamond indenter indentation was established. The process of stress and strain distribution, dislocation evolution, dislocation expansion and potential energy change were analyzed, combined with the radial distribution function and load displacement curve. The influence of temperature on the 3C-SiC material was discussed. The variation trend of the potential energy-step curve is basically the same at the temperatures of 0 K, 300 K, 600 K and 900 K. The difference in strain distribution was characterized by the influence of temperature on stress intensity, expansion direction and type. The microcosmic manifestation is the significant difference in the dislocation slip at low temperature. In the process of dislocation evolution and expansion, dislocation climbs at room temperature and increases at high temperature, which is closely related to energy release. This study has certain guiding significance for investigating the internal damage difference and temperature effect of the 3C-SiC sample.
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页数:13
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共 22 条
  • [1] Improving the Rotational Freedom of Polyetherimide: Enhancement of the Dielectric Properties of a Commodity High-Temperature Polymer Using a Structural Defect
    Alamri, Abdullah
    Wu, Chao
    Mishra, Ankit
    Chen, Lihua
    Li, Zongze
    Deshmukh, Ajinkya
    Zhou, Jierui
    Yassin, Omer
    Ramprasad, Rampi
    Vashishta, Priya
    Cao, Yang
    Sotzing, Gregory
    [J]. CHEMISTRY OF MATERIALS, 2022, 34 (14) : 6553 - 6558
  • [2] Structural and Thermo-Physical Properties of 3C-SiC: High-Temperature and High-Pressure Effects
    Daoud, Salah
    Bouarissa, Nadir
    Rekab-Djabri, Hamza
    Saini, Pawan Kumar
    [J]. SILICON, 2022, 14 (11) : 6299 - 6309
  • [3] First-principles investigation of effects of defects on the physical properties of 3C-SiC under high temperatures and pressures
    Fan, Touwen
    Liu, Wei
    Ruan, Zixiong
    Cao, Yuxin
    Ye, Tuo
    Liu, Jinzhong
    Zhong, Feng
    Tan, Xiaochao
    Liang, Houjiang
    Chen, Dongchu
    Tang, Pingying
    Wu, Yuanzhi
    [J]. JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 20 : 3633 - 3645
  • [4] Huang Yue-fei, 2009, Journal of System Simulation, V21, P4454
  • [5] Analytic model of dislocation density evolution in fcc polycrystals accounting for dislocation generation, storage, and dynamic recovery mechanisms
    Hunter, Abigail
    Preston, Dean L.
    [J]. INTERNATIONAL JOURNAL OF PLASTICITY, 2022, 151
  • [6] Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates
    Huseynov, Elchin M.
    Naghiyev, Tural G.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2022, 128 (02):
  • [7] Molecular Dynamics Simulation of Nanoindentation of Cu/Au Thin Films at Different Temperatures
    Li, Qibin
    Huang, Cheng
    Liang, Yunpei
    Fu, Tao
    Peng, Tiefeng
    [J]. JOURNAL OF NANOMATERIALS, 2016, 2016
  • [8] Indenter radius effect on mechanical response of a-(11-20), c-(0001), and m-(-1100) plane GaN single crystals in nanoindentation: A molecular dynamics study
    Li, Rui
    Wu, Gai
    Liang, Kang
    Wang, Shizhao
    Xue, Lianghao
    Sun, Yameng
    Dong, Fang
    Li, Hui
    Liu, Sheng
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 145
  • [9] Effects of surface tension on the nanoindentation with a conical indenter
    Long, Jianmin
    Chen, Wen
    [J]. ACTA MECHANICA, 2017, 228 (10) : 3533 - 3542
  • [10] The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
    Marinova, M.
    Mantzari, A.
    Beshkova, M.
    Syvajarvi, M.
    Yakimova, R.
    Polychroniadis, E. K.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 367 - +