A Review of Tunnel Field-Effect Transistors for Improved ON-State Behaviour

Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can possibly replace the traditional MOSFET from current IC technology. It has gained much attention from the researchers because of its ability to achieve steep subthreshold slope, a greater immunity towards the short-channel effects and low standby power dissipation. Although TFET promises a lot of advantages over other contenders of MOSFET, the current transport mechanism i.e., band to band tunneling (BTBT) leads to its two major roadblocks such as low ON-state current and ambipolarity. This article presents a detailed survey on the various techniques suggested by the researchers to improve the ON-State current along with subthreshold swing in Tunnel FETs.