Atomic-scale interface engineering for two-dimensional materials based field-effect transistors

Two-dimensional (2D) materials with free of dangling bonds have the potential to serve as ideal channel materials for the next generation of field-effect transistors (FETs) due to their atomic-thin and excellent electronic properties. However, the performance of 2D materials-based FETs is still dictated by the interface between electrodes/dielectrics and 2D materials. Several technical challenges such as improving device stability, reducing contact resistance, and advancing mobility need to be overcome. Herein, we focus on the effects of atomic-scale interface engineering on the contact resistance and dielectric layer for 2D FETs. Universal strategies we consider to achieve ohmic contact and develop high-quality, defect-free dielectric layers are provided. Furthermore, advancing the performance of 2D materials-based FETs and binding to silicon substrates are briefly analyzed.