Seebeck-induced anomalous Nernst effect in van der Waals MnBi2Te4 layers

Magnetic semiconductors with an anomalous Hall conductivity sigma ( xy ) not equal 0 near the Fermi energy are expected to have a large anomalous Nernst coefficient N owing to the Seebeck term, which is the product of the Hall angle ratio and Seebeck coefficient. In this study, we examined the typical cases of divide N divide >= 20 mu V K-1 in the ferrimagnetic phase of semiconducting van der Waals layers MnBi2Te4 using first-principles calculations. A large enhancement in divide N divide was obtained by the Seebeck term for a wide range of carrier concentrations. The present results motivate further studies on the anomalous Nernst effect in intrinsically or doped magnetic semiconductors.