High-temperature photoluminescence properties of various defects in hydrothermally grown ZnO microrods

被引：1
|
作者：
Jalolov, R. R. [1 ,2 ,3 ]
Rustamova, B. N. [1 ]
Urolov, Sh. Z. [1 ,4 ]
Shaymardanov, Z. Sh. [1 ,3 ]
机构：
[1] Uzbek Acad Sci, Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan
[2] Cent Asian Univ, Tashkent 111221, Uzbekistan
[3] Natl Univ Uzbekistan, 100174 Tashkent, Uzbekistan
[4] Tashkent Inst Irrigat & Agr Mechanizat Engineers, Tashkent 100000, Uzbekistan
来源：
PHYSICA B-CONDENSED MATTER | 2024年 / 675卷
关键词：
ZnO microrods; Photoluminescence; Defect; High; -temperature; Hydrothermal; BAND-GAP; RULE;
D O I：
10.1016/j.physb.2023.415613
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
High-temperature photoluminescence properties of hydrothermally grown ZnO microrods were reported. Photoluminescence spectra of ZnO microrods deconvoluted into three Gaussian components: near band edge (NBE) emission, Violet emission (VL) and Yellow emission (YL) peaks corresponding to free excitons, zinc vacancies and interstitial oxygen atoms, respectively. Increasing the temperature caused a redshift of the energy position of the NBE and VL peaks and a blueshift of the energy position of the YL peak were observed. In the temperature range from 300K to 473K, the intensities of the NBE and VL bands varied based on a nonlinear pattern. Intensity of these emission bands decreases from temperature 473K-673K. As the temperature increases, changes in the energy and crystal structures of the material due to decrease in the concentration of defects cause a blueshift of the emission bands related to interstitial atoms, and a redshift of the emission bands related to vacancies.
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页数：7
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