Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β-Ga2O3

被引：3
|
作者：
Taube, Andrzej [1 ]
Borysiewicz, Michal A. [1 ]
Sadowski, Oskar [1 ,2 ]
Wojcicka, Aleksandra [1 ]
Tarenko, Jaroslaw [1 ,2 ]
Piskorski, Krzysztof [1 ]
Wzorek, Marek [1 ]
机构：
[1] Lukasiewicz Res Network, Inst Microelect & Photon, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Warsaw Univ Technol, Inst Microelect & Optoelect, Ul Koszykowa 75, PL-00662 Warsaw, Poland
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2023年 / 154卷
关键词：
Gallium oxide; Transition metal silicide; Schottky contact; M-Si-O; Ru-Si-O; Ir-Si-O; RU-SI-O; WORK FUNCTION; BETA-GA2O3; EPITAXY;
D O I：
10.1016/j.mssp.2022.107218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we propose a new scheme for Schottky contacts to -Ga2O3, namely - Ru-Si-O and Ir-Si-O conductive layers, fabricated by means of reactive magnetron sputtering of ruthenium or iridium silicide (Ru-Si, Ir-Si) targets in oxygen containing atmosphere. The influence of oxygen partial pressure during deposition on the microstructure and electrical parameters of layers was investigated. The properties of Ir-Si-O and Ru-Si-O as well as Ir-Si and Ru-Si Schottky contacts to -Ga2O3 were compared. Work function of Ir-Si-O layers was in range of 4.97-5.08 eV as compared to 5.6-5.65 eV for Ru-Si-O layers. The investigated Schottky contacts show strong positive correlation between homogeneous barrier height and contact work function, roughly following Schottky-Mott relation. Our findings opens new possibilities to produce Schottky contacts to -Ga2O3 with tailored properties using the M-Si-O (where M is transition metal) material system.
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页数：7
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