The effect of B-site ions on crystal structure evolution and microwave dielectric properties of gillespite-type SrCu0.95B0.05(B2+: Cu, Co, Mn, Ni, Mg, Zn)Si4O10

被引：4
作者：
Cheng, Zelai [1 ]
Xu, Liming [2 ]
Wang, Xi [1 ]
Wu, Xiaohui [1 ]
Huang, Fangyi [1 ]
Jing, Yulan [1 ]
Su, Hua [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China
[2] Natl Key Lab Electromagnet Space Secur, Chengdu 610036, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2023年 / 49卷 / 22期
基金：
中国国家自然科学基金;
关键词：
Microwave dielectric ceramic; Gillespite-type; LATTICE ENERGY; BOND-VALENCE; CERAMICS; DEPENDENCE; SR; CA;
D O I：
10.1016/j.ceramint.2023.09.009
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Gillespite-type SrCu0.95B0.05(B2+:Cu,Co,Mn,Ni,Mg,Zn)Si4O10 (SCBS) ceramics were prepared by high -temperature solid-state method. Their microwave dielectric properties and crystal structure evolution were studied by P-V-L theory, bond valence model, and X-ray photoelectron spectroscopy. Varying B2+ ion changed ionic polarizability and bond ionicity, causing dielectric constant er of SCBS to change. The change in quality factor Q x f was explained by lattice energy, oxidation state of Cu, and internal strain/fluctuation. The tem-perature coefficient of resonator frequency Tf was regulated by B-O bond length and valence. The optimal mi-crowave dielectric properties were exhibited by SrCu0.95Mn0.05Si4O10 after sintering at 1050 degrees C: er-5.8 +/- 0.03, Q x f-65,589 +/- 2611 GHz (@15.8 GHz), and Tf --50 +/- 4 ppm/degrees C. These materials show great potential application prospects for 5G/6G wireless communication.
引用
收藏
页码：36800 / 36806
页数：7
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