A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology

被引：1

作者：

Mehraban, Haniye ^{[1
]}

Park, Wan-Soo ^{[2
]}

Jo, Hyeon-Bin ^{[2
]}

Choi, Su-Min ^{[2
]}

Kim, Dae-Hyun ^{[2
]}

Kim, Sang-Kuk ^{[3
]}

Yun, Jacob ^{[3
]}

Kim, Ted ^{[3
]}

Choi, Wooyeol ^{[1
]}

机构：

[1] Oklahoma State Univ, Stillwater, OK 74078 USA

[2] Kyungpook Natl Univ, Daegu, South Korea

[3] QSI Inc, Cheonan, South Korea

来源：

2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS | 2023年

基金：

新加坡国家研究基金会;

关键词：

Coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); low noise amplifier (LNA); W-band;

D O I：

10.1109/WMCS58822.2023.10194275

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW.

引用

页数：4

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