Operando Characterizations of Light-Induced Junction Evolution in Perovskite Solar Cells

被引:5
|
作者
Xiao, Chuanxiao [1 ,2 ,3 ]
Zhai, Yaxin [1 ,4 ]
Song, Zhaoning [5 ]
Wang, Kang [1 ,6 ]
Wang, Changlei [5 ,7 ,8 ]
Jiang, Chun-Sheng [1 ]
Beard, Matthew C. [1 ]
Yan, Yanfa [5 ]
Al-Jassim, Mowafak [1 ]
机构
[1] Natl Renewable Energy Lab NREL, Golden, CO 80401 USA
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Ningbo New Mat Testing & Evaluat Ctr CO Ltd, Ningbo 315201, Zhejiang, Peoples R China
[4] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contro, Dept Phys, Minist Educ, Changsha 410081, Peoples R China
[5] Univ Toledo, Toledo, OH 43606 USA
[6] Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
[7] Soochow Univ, Sch Optoelect Sci & Engn, Suzhou 215006, Peoples R China
[8] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China
关键词
perovskite solar cell; light soak; electric field; interfacial recombination; junction; operation mechanism; operando characterizations; HYDROGENATED AMORPHOUS-SILICON; HALIDE PEROVSKITES; ION MIGRATION; EFFICIENCY; ELECTRON; ORIGINS; SOAKING; RANGE;
D O I
10.1021/acsami.2c22801
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Light-induced performance changes in metal halide perovskite solar cells (PSCs) have been studied intensively over the last decade, but little is known about the variation in microscopic optoelectronic properties of the perovskite hetero-junctions in a completed device during operation. Here, we combine Kelvin probe force microscopy and transient reflection spectroscopy techniques to spatially resolve the evolution of junction properties during the operation of metal-halide PSCs and study the light-soaking effect. Our analysis showed a rise of an electric field at the hole-transport layer side, convoluted with a more reduced interfacial recombination rate at the electron-transport layer side in the PSCs with an n-i-p structure. The junction evolution is attributed to the effects of ion migration and self-poling by built-in voltage. Device performances are correlated with the changes of electrostatic potential distribution and interfacial carrier dynamics. Our results demonstrate a new route for studying the complex operation mechanism in PSCs.
引用
收藏
页码:20909 / 20916
页数:8
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