Tuning of electronic bandgap and electronic transport properties of double perovksites A2NaScI6(A = Rb, Cs) for energy device applications

被引:4
作者
Alburaih, Huda A. [1 ]
Noor, N. A. [2 ]
Rashid, M. [3 ]
Nazir, Sadia [4 ]
Laref, A. [5 ]
机构
[1] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Phys, POB 84428, Riyadh 11671, Saudi Arabia
[2] RIPHAH Int Univ, Dept Phys, Campus Lahore, Lahore 53700, Pakistan
[3] Ghazi Univ, Dept Phys, Dera Ghazi Khan, Pakistan
[4] Univ Lahore, Dept Phys, Lahore 54000, Pakistan
[5] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
关键词
A(2)NaScI(6) (A = Rb; Cs) double perovskites; elastic properties; semiconductors; figure of merit (ZT); solar cells applications; SOLAR-CELLS; AB-INITIO; LEAD-FREE; DOUBLE PEROVSKITE; PRESSURE;
D O I
10.1088/1402-4896/acad3a
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Non-toxicity, ecosystem stability, and distinct performance are the reasons to make halide-based perovskites suitable for solar and thermoelectric purposes. This paper studied elastic properties and structural stability of cubic phase double perovskites (DPs) A(2)NaScI(6) (A = Rb, Cs) by Born stability criteria and tolerance factor. Moreover, we comprehensively examine these DPs in terms of elastic, electronic, optical, and transport behavior. The bandgap range 2.80-2.70 eV is discerned in the electronic band structure and contributes to optoelectronic devices. Most of the absorption is observed in the visible region, and bandgap is reduced by interchanging Rb with Cs atom. The dielectric constants and other optical factors are used to reveal the optical properties of A(2)NaScI(6) (A = Rb, Cs). In the last, the thermoelectric characteristics are calculated by employing BoltzTrap code. The calculated value of the figure of merit (ZT) intimates that the analyzed materials are apposite for thermoelectric purposes.
引用
收藏
页数:10
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