The beta-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8 similar to 4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the beta-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure beta-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in beta-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and beta-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown beta-Ga(2)O(3)single crystal were analyzed according to the Sn dopant content, and the property variation of beta-Ga(2)O(3)single crystal according to the Sn doping were extensively investigated.
