3 V operation of pentacene-based floating-gate memory realized by the isolation process with Ar/N2-plasma nitridation for N-doped LaB6 metal and high-k LaB x Ny insulator stacked structure

In this paper, we have investigated the low-voltage operation of pentacene-based floating-gate (FG) memory utilizing nitrogen-doped (N-doped) LaB6 metal and LaB (x) N (y) insulator stacked structure. The pentacene-based FG Au/pentacene/N-doped LaB6(Metal: M)/LaB (x) N (y) (Insulator: I)/N-doped LaB6(M)/LaB (x) N (y) (I)/n(+)-Si(100) (Semiconductor: S) MIMIS organic field-effect transistor (OFET) was fabricated by utilizing the Ar/N-2-plasma nitridation to isolate the edge region of the N-doped LaB6 FG with Au source/drain (S/D) electrodes. The Ar/N-2-plasma nitridation was found to be effective in suppressing the leakage current between the Au S/D electrodes and N-doped LaB6 FG. The pentacene-based FG memory was successfully developed with the memory window (MW) of 0.71 V and the saturation mobility (mu (sat)) of 1.8 x 10(-2) cm(2)/(V center dot s), under pulse input of +/- 3.4 V/10 ms due to the small equivalent oxide thickness (EOT) of 3.1 nm. Furthermore, MW of 0.4 V was obtained under minimum program/erase pulse amplitude/width of +/- 3 V/100 mu s at the process temperature of 200 degrees C.