Thermoelastic analysis of semiconducting solid sphere based on modified Moore-Gibson-Thompson heat conduction with Hall Effect

The main contribution of this study is to present a unique new mathematical model of photo-thermoelastic interactions with Hall current effect in an infinite semiconducting solid sphere due to high magnetic field acting along its axis. A variable heat flux is applied to the boundary surface of a solid semiconductor sphere. A generalized modified Moore-Gibson-Thompson-Photo-Thermal (MGTPT) theory is used to express the governing equations. In the Green Nagdhi (GN III) model, a thermal relaxation parameter and carrier density parameter is introduced to obtain the new modified Moore-Gibson-Thompson equation (MGT). This mathematical model is solved using Laplace's transforms. Various components of displacement, thermodynamic temperature, conductive temperature, carrier density and axial stress as well as couple stress are obtained in the transformed domain. To get the solution in physical domain, numerical inversion techniques have been employed. The effect various thermoelasticity theories and Hall current is shown graphically on the physical quantities.