Hot-Exciton Mechanism and AIE Effect Boost the Performance of Deep-Red Emitters in Non-Doped OLEDs

被引:24
作者
Du, Songyu [1 ,2 ]
Luo, Ming [1 ,2 ]
Li, Deli [3 ,4 ]
Lyu, Lingling [5 ]
Li, Wei [1 ,2 ]
Zhao, Mengyu [1 ,2 ]
Wang, Zhichuan [1 ,2 ]
Zhang, Jiasen [1 ,2 ]
Liu, Denghui [3 ,4 ]
Li, Yong [1 ,2 ]
Su, Shi-Jian [3 ,4 ]
Ge, Ziyi [1 ,2 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Engn Res Ctr Energy Optoelect Mat &, Ningbo 315201, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Wushan Rd 381, Guangzhou 510640, Guangdong, Peoples R China
[4] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, Wushan Rd 381, Guangzhou 510640, Guangdong, Peoples R China
[5] Ningbo Dayang Technol Co Ltd, Inst New Energy Technol, Zhongguan Rd 1219, Ningbo 315000, Peoples R China
基金
中国国家自然科学基金;
关键词
aggregation-induced emission; deep-red; high-lying triplet excitons; hot excitons; organic light-emitting diodes; ACCEPTOR;
D O I
10.1002/adma.202303304
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Luminescent materials possessing a "hot-exciton" mechanism and aggregation-induced emission (AIE) qualities are well-suited for use as emitting materials in nondoped organic light-emitting diodes (OLEDs), particularly in deep-red regions where their ground state and singlet excited state surfaces are in proximity, leading to the formation of multiple nonradiative channels. However, designing molecules that artificially combine the hot-exciton mechanism and AIE attributes remains a formidable task. In this study, a versatile strategy is presented to achieve hot-exciton fluorescence with AIE property by increasing the first singlet excited (S-1) state through modulation of the conjugation length of the newly created acceptor unit, matching the energy level of high-lying triplet (T-n) states, and enhancing exciton utilization efficiency by employing suitable donor moieties. This approach reduces the aggregation-caused quenching (ACQ) in the aggregate state, resulting in the proof-of-concept emitter DT-IPD, which produces an unprecedented external quantum efficiency (EQE) of 12.2% and Commission Internationale de I'Eclairage (CIE) coordinates of (0.69, 0.30) in a deep-red non-doped OLED at 685 nm, representing the highest performance among all deep-red OLEDs based on materials with hot-exciton mechanisms. This work provides novel insights into the design of more efficient hot-exciton emitters with AIE properties.
引用
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页数:8
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