Structural, morphology and optical properties studies of Ni doped CdSe thin films

被引:0
作者
Alsoofy, A. J. Jarjees [1 ]
Ali, R. S. [2 ]
Mosa, Z. S. A. [3 ]
Habubi, N. F. [4 ]
Chiad, S. S. [5 ]
机构
[1] Univ Mosul, Coll Sci, Dept Phys, Mosul, Iraq
[2] Mustansiriyah Univ, Coll Sci, Dept Phys, Baghdad, Iraq
[3] Al Manara Coll Med Sci, Dept Pharm, Amarah, Iraq
[4] Univ Coll, Dept Radiat & Sonar Technol, Alnukhba, Baghdad, Iraq
[5] Mustansiriyah Univ, Coll Educ, Dept Phys, Baghdad, Iraq
来源
CHALCOGENIDE LETTERS | 2023年 / 20卷 / 05期
关键词
CdSe; Ni; Thin films; Thermal evaporation; XRD; AFM; Optical properties; Energy gap; ELECTRICAL-PROPERTIES; TEMPERATURE; DEPOSITION;
D O I
10.15251/CL.2023.205.367
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance decreased as the Ni films were doped, respectively. Additionally, it was discovered that all produced films had absorption coefficients larger than (alpha >10(4) cm(-1)) and that the value of this coefficient rises with increasing doping. The films exhibited all direct optical energy gaps, according to the findings (CdSe). As the doping fraction decreased, the gap values decreased from 1.72 eV to 1.62 eV.
引用
收藏
页码:367 / 376
页数:10
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