Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

被引：3

作者：

Li, Hang ^{[1
]}

Wang, Ying ^{[1
]}

Guo, Yingnan ^{[1
]}

Wang, Shufang ^{[1
]}

Fu, Guangsheng ^{[1
]}

Mazur, Yuriy I. ^{[2
]}

Ware, Morgan E. ^{[2
]}

Salamo, Gregory J. ^{[2
]}

Liang, Baolai ^{[1
,3
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

[3] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 17期

基金：

中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; LOCALIZED STATES; PHOTOLUMINESCENCE; PHOTODETECTORS; HETEROJUNCTION; EMISSION;

D O I：

10.1063/5.0152094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exciton dynamics in a GaAsSb/GaAs quantum well (QW) heterostructure were investigated via both steady state and transient photoluminescence. The measurements at 10 K demonstrated the coexistence of localized excitons (LEs) and free excitons (FEs), while a blue-shift resulting from increased excitation intensity indicated their spatially indirect transition (IT) characteristics due to the type-II band alignment. With increasing temperature from 10 K, the LEs and FEs redistribute, with the LEs becoming less intense at relatively higher temperature. With increasing temperature to above 80 K, electrons in GaAs are able to overcome the small band offset to enter inside GaAsSb and recombine with holes; thus, a spatially direct transition (DT) appeared. Hence, we are able to reveal complex carrier recombination dynamics for the GaAsSb/GaAs QW heterostructure, in which the "S" shape behavior is generated not only by the carrier localization but also by the transformation from IT to DT with elevated temperature.

引用

页数：7

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